MJE340 데이터 시트보기 (PDF) - SavantIC Semiconductor

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MJE340

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0

V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100µA;IC=0

VCE(sat) Collector-emitter saturation voltage IC=100mA ;IB=10mA

VBE(sat) Base-emitter saturation voltage

IC=100mA ;IB=10mA

ICBO

Collector cut-off current

VCB=300V; IE=0

IEBO

Emitter cut-off current

VEB=3V; IC=0

hFE

DC current gain

IC=50mA ; VCE=10V

Product Specification

MJE340

MIN TYP. MAX UNIT

300

V

300

V

3

V

1.0

V

1.5

V

100

µA

100

µA

30

240

2

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