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MJF13007 데이터 시트보기 (PDF) - ON Semiconductor

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MJF13007
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJF13007 Datasheet PDF : 12 Pages
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MJE13007
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
ICES
IEBO
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
Clamped Inductive SOA with Base Reverse Biased
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
hFE
VCE(sat)
VBE(sat)
fT
Cob
Delay Time
td
Rise Time
(VCC = 125 Vdc, IC = 5.0 A,
tr
IB1 = IB2 = 1.0 A, tp = 25 µs,
Storage Time
Duty Cycle 1.0%)
ts
Fall Time
tf
Inductive Load, Clamped (Table 1)
Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A
TC = 25°C
tsv
Vclamp = 300 Vdc
TC = 100°C
Crossover Time
IB(on) = 1.0 A, IB(off) = 2.5 A
TC = 25°C
tc
LC = 200 µH
TC = 100°C
Fall Time
TC = 25°C
tfi
TC = 100°C
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
Typ
Max
Unit
400
Vdc
mAdc
0.1
1.0
100
µAdc
See Figure 6
See Figure 7
8.0
40
5.0
30
Vdc
1.0
2.0
3.0
3.0
Vdc
1.2
1.6
1.5
4.0
14
80
MHz
pF
0.025
0.1
µs
0.5
1.5
1.8
3.0
0.23
0.7
1.2
2.0
µs
1.6
3.0
0.15
0.30
µs
0.21
0.50
0.04
0.12
µs
0.10
0.20
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