MJH10012 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJH10012 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJH10012
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
400
V
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
1.5
V
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A
2.0
V
VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=2A
2.5
V
VBEsat-1 Base-emitter saturation voltage
IC=6A; IB=0.6A
2.5
V
VBEsat-2 Base-emitter saturation voltage
IC=10A; IB=2A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=6V
2.8
V
ICBO
Collector cut-off current
VCB=600V; IE=0
1
mA
固IN电C半H导AN体GE SEMICONDUCTOR ICEO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCE=400V; IB=0
VEB=6V; IC=0
IC=3A ; VCE=6V
IC=6A ; VCE=6V
1
40
300
100
2000
mA
mA
hFE-3
DC current gain
IC=10A ; VCE=6V
20
VF
Diode forward voltage
ts
Storage time
tf
Fall time
IF=10A
IC=6.0A ; VCC=12V
IB1=IB2=0.3A
3.5
V
15
μs
15
μs
2
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