MJW21191 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJW21191

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJW21191

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-10mA; IB=0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-4A ;IB=B -0.4A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A ;IB=B -1.6A

VBE(on) Base-Emitter On Voltage

IC=-4A ; VCE=-2V

ICEs

Collector Cutoff Current

VCE= -250V; IE=0

IEBO

Emitter Cutoff Current

VEB=-5V; IC=0

hFE-1

DC Current Gain

IC=-4A; VCE=-2V

hFE-2

DC Current Gain

IC=-8A; VCE=-2V

fT

Current Gain-Bandwidth Product

IC=-1A ;VCE=-10V; ftest=1MHz

MIN TYP. MAX UNIT

-150

V

-1.0 V

-2.0 V

-2

V

-10 μA

-10 μA

15

100

5

4

MHz

isc Website：www.iscsemi.cn

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