MC33111D 데이터 시트보기 (PDF) - LANSDALE Semiconductor Inc.
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MC33111D Datasheet PDF : 12 Pages
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ML33111
RECOMMENDED OPERATING CONDITIONS
Characteristic
Symbol
Min
VCC Supply Voltage
Input Signal Voltage Range (3.0 V < VCC < 7.0 V)
Compressor — Normal and Mute Mode
— Passthrough Mode
Expander — Normal Mode
— Mute Mode
— Passthrough Mode
VCC
3.0
Vin
0
0
0
0
0
Frequency Range (± 1.0 dB accuracy)
Fin
0.300
Logic Input Voltage Range (Pins 4, 8, 12)
Operating Ambient Temperature
Vin
0
TA
– 40
NOTE: All limits are not necessarily functional concurrently.
ELECTRICAL CHARACTERISTICS (VCC = 3.6 V, f = 1.0 kHz, TA = + 25°C, unless noted.)
Characteristic
Symbol
Min
COMPRESSOR (Pin 4 = Low unless noted)
0 dB Gain (Vin = 100 mVrms)
Gain tracking relative to GOC
Vin = 1.0 Vrms
Vin = 1.0 mVrms
Passthrough Gain (Pin 8 = High, Pin 4 = Low, Vin = 1.0 Vrms)
Muting (∆ Gain) with Pin 4 = High (Vin = 1.0 Vrms)
Max. Output Swing @ Pin 2 (3.0 V < VCC < 7.0 V)
Normal Mode
Passthrough Mode
GOC
GTC
GPTC
GMTC
Vout
–1.5
9.0
– 21
– 2.0
55
—
—
Peak Output Current (3.0 ≤ VCC ≤ 7.0 V, Normal or Passthrough Modes,
IPK
—
Vin = Max)
Total Harmonic Distortion (Vin = 100 mVrms)
Power Supply Rejection @ 1.0 KHz
Vin (Pin 3) = 0
Vin (Pin 3) = 10 mVrms
Vin (Pin 3) = 1.0 Vrms
THD
—
PSRR
—
—
—
Attack Time (Capacitor @ Pin 5 = 1.0 µF, per EIA-553)
Decay Time (Capacitor @ Pin 5 = 1.0 µF, per EIA-553)
tAT(C)
—
tD(C)
—
Input Impedance at Pin 3
Rin
8.0
DC Bias Level (Pin 2)
Output DC Shift (Vin Changed from 0 to 100 mVrms)
VbIAS
1.4
– 20
EXPANDER (Pin 12 = Low, unless noted)
0 dB Gain (Vin = 100 mVrms)
Gain Tracking Relative to GOE
Vin = 316 mVrms
Vin = 10 mVrms
Passthrough Gain (Pin 8 = High, Pin 12 = Low, Vin = 1.0 Vrms)
Muting (∆ Gain) with Pin 12 = High (Vin = 0.316 Vrms)
Max. Output Swing @ Pin 15 (3.0 V < VCC , 7.0 V)
Normal Mode
Passthrough Mode
GOE
–1.5
GTE
19
– 41
GPTE
–1.0
GMTE
60
Vout
—
—
Peak Output Current
VCC = 3.0 V, Vout ≤ 2.4 Vp-p
VCC = 3.0 V, Vout = 2.7 Vp-p
VCC ≥ 3.6 V, Vout ≤ 2.8 Vp-p
IPK
—
—
—
Total Harmonic Distortion (Vin = 100 mVrms)
THD
—
LANSDALE Semiconductor, Inc.
Typ
Max
Unit
—
7.0
Vdc
—
1.3
Vrms
—
0.8
—
0.32
—
1.3
—
1.0
—
10
kHz
—
VCC
Vdc
—
+ 85
°C
Typ
0
10
– 20
0
67
1.1
2.3
± 4.0
0.2
37
64
72
3.0
14
10
Vb
1.6
0
20
– 40
0
76
2.8
2.8
± 3.5
±1.0
± 4.0
0.2
Max
Unit
1.5
dB
dB
11
–19
1.0
dB
—
dB
Vp-p
—
—
—
mA
1.0
%
dB
—
—
—
—
ms
—
14
kΩ
1.6
Vdc
2.0
mVdc
1.5
dB
dB
21
– 39
2.0
dB
—
dB
Vp-p
—
—
mA
—
—
—
1.0
%
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