MMBD4448V 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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MMBD4448V

SWITCHING DIODE

Shenzhen Jin Yu Semiconductor Co., Ltd.  

SWITCHING DIODE

MMBD4448V

SOT-563

FEATURES

z Fast switching speed

z High conductance

MARKING: KAL

Maximum Ratings @TA=25℃

Parameter

Non-Repetitive Peak reverse voltage

RMS Reverse Voltage

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Average Rectified Output Current

Peak forward surge current @=1.0μs

@=1.0s

Power Dissipation

Thermal Resistance Junction to

Ambient

Storage temperature

Symbol

VRM

VR(RMS)

VRRM

VRWM

VR

IFM

IO

IFSM

Pd

RθJA

TSTG

Electrical Ratings @TA=25℃

Parameter

Reverse Breakdown Voltage

Forward voltage

Reverse current

Capacitance between terminals

Reverse Recovery Time

Symbol

V(BR)R

VF1

VF2

VF3

VF4

IR1

IR2

CT

trr

Min.

80

0.62

Limits

100

57

80

500

250

4.0

1.5

150

833

-65 to +150

Typ. Max. Unit

V

0.72

V

0.855

V

1.0

V

1.25

V

0.1

μA

25

nA

3.5

pF

4

ns

1

JinYu

semiconductor

www.htsemi.com

1

Unit

V

V

V

mA

mA

A

mW

K/W

℃

Conditions

IR=2.5μA

IF=5mA

IF=10mA

IF=100mA

IF=150mA

VR=70V

VR=20V

VR=6V,f=1MHz

VR=6V, IF=5mA

Date:2011/ 05

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