MMBD7000LT1 데이터 시트보기 (PDF) - Willas Electronic Corp.
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MMBD7000LT1 Datasheet PDF : 3 Pages
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WILLAS FM120-M
200mA Surface Mount Switching Diode-100V
1.0A SURFACE MOUNT SCHOTTKSYOBTA-R2R3IEPRacRkEaCgTeIFIERS
-20V-
2M00VMBD7000FLMT11T2H0R0U-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Package outline
SOD-123H
• Low power loss, high efficiency.
• High current capa1bility, low forward voltage dr2op.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capaAbNilOitDy.E
CATHODE
• Guardring for overvoltage protection.
• Ultra high-speed switching.
3
•
Silicon
epitaxial
planar
CATHODE/ANODE
chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXMIMeUcMhaRnATicINaGlSd(EaAtaCH DIODE)
• EpoRxyat:iUngL94-V0 rated flame retardSanytmbol
Value
Reverse Voltage
VR
Forw•aCrdaCseur:reMnotlded plastic, SOD-123H
IF
100
200 ,
Peak• FToerrwmairndaSlsu:rPgelaCteudrrteenrtminals, solderaIbFlMe(suprgee)r MIL-STD5-07050
Method 2026
THE•RPMoAlaLrCityH:AIRndAiCcaTtEeRd IbSyTcICaSthode band
CASE 318–08, STYLE11
Unit
SOT– 23 (TO–236AB)
0.040(1.0)
0.024(0.6)
Vdc
mAdc 0.031(P0.8b)-TFyrpe. e package is available
0.031(0.8) Typ.
mAdc
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Moisture Sensitivity Level 1
Dimensions in inches and (millimeters)
• MoCuhntainragcPteorsiistitoicn : Any
Symbol
Max
Unit
Total•DWeveicigehDt i:sAsipppartiooxnimFRa–te5dB0o.0ar1d1(1g) ram P D
225
mW
T A = 25°C
Derate aboveM25A°CXIMUM RATINGS AND ELECTRICA1L.8CHARACmWTE/°CRISTICS
RaTtihnegrsmaatl2R5e℃sisatamnbciee,nJtutenmctipoenratotuAremubnielensts otheRrwθ iJsAe specified.556
°C/W
SinTgoltealpDhaesveicehaDlfiswsaipvaet,io6n0Hz, resistive of inductivPe lDoad.
300
mW
FoAr cluampiancaitiSvueblostarda,ted,e(2r)aTteA c=u2rr5e°nCt by 20%
Derate above 25°CRATINGS
Thermal Resistance, Junction to Ambient
Marking Code
MaxJiumnucmtioRneacunrdreSnttoPraegake RTeemveprseeraVtuorlteage
2.4
mW/°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
R θ JA
12417 13 °C/W14
15
16
18
10
115 120
T J , TVsRtgRM –5520to +15030
°C40
50
60
80
100
150
200
Maximum RMS Voltage
MaxDimEuVmICDECMBAloRckKinINg GVoltage
MMBD7000LT1 = M5C
Maximum Average Forward Rectified Current
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
PeaEk LFoErwCaTrdRSICurAgeLCCurHreAntR8A.3CmTsEsiRngIlSe ThaIClf sSin(eT-wAa=ve25°CIFuSnMless otherwise noted)(EACH DIODE)
superimposed onCrahteadralocatde(rJiEsDtiEcC method)
Symbol
Min
TypOicaFlFTCheHrAmRalARCesTisEtaRnIcSeT(INCoSte 2)
RΘJA
TypRiceavl JeursnectiBonreCaakpdaocwitnanVcoel(taNgoete 1)
Ope(Ira(BtRin) =g T1e0m0 pµeAradtcu)re Range
StorRaegveeTresempVeorlatatugree LReaankgaege Current
CJ
TJ
TSTG
V-5(B5R)to +125 100
30
Max
40
—120
- 65 to +175
Unit
Vdc
-55 to +150
µAdc
(V R = 50 Vdc) CHARACTERISTICS
Max(iVmuRm=
100 Vdc)
Forward Voltage
at
1.0A
DC
(V R = 50 Vdc,125°C)
MaxFimoruwmarAdveVroaglteagReeverse Current at @T A=25℃
Rat(eIdFD=C1B.0lomckAindgc)Voltage
@T A=125℃
IR
—
1.0
SYMBOL
VF
FM120-MH FM130-MH FM140-MH
I R2
—
0.50
FM150-MH FM160-MH
3.0
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-M
0.92
IR
I R3
VF
—
0.55
100
0.5
Vdc
0.710
NOT(EI SF := 10 mAdc)
0.67
0.82
1- M(eIaFsu=re1d0a0t m1 MAdHcZ)and applied reverse voltage of 4.0 VDC.
0.75
1.1
2- ThReermvearlsReesRisetacnocveeFryroTmimJuenction to Ambient
(I F = I R = 10 mAdc) (Figure 1)
t rr
—
4.0
ns
Capacitance(VR=0V)
C
—
1.5
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-1
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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