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MMBFJ309LT1(2001) 데이터 시트보기 (PDF) - ON Semiconductor

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MMBFJ309LT1
(Rev.:2001)
ONSEMI
ON Semiconductor ONSEMI
MMBFJ309LT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MMBFJ309LT1 MMBFJ310LT1
70
70
60
VDS = 10 V
50
IDSS
40
+ā25°C
60
TA = -ā55°C
50
+ā25°C
40
30
+150°C 30
20
+ā25°C
20
10
-ā55°C +150°C 10
0
-5.0
-4.0
-3.0
-2.0
-1.0
0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
100 k
10 k
1.0 k
Yfs
Yfs
100
1.0 k
VGS(off) = -ā2.3 V =
10
Yos
VGS(off) = -ā5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 2. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
10
120
RDS
96
7.0
72
Cgs
4.0
48
Cgd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 3. On Resistance and Junction
Capacitance versus Gate–Source Voltage
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