MMBT2222 데이터 시트보기 (PDF) - TY Semiconductor

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MMBT2222

NPN General Purpose Amplifier

TY Semiconductor 

Product specification

MMBT2222

■ Features

● Epitaxial planar die construction.

● Complementary PNP type available(MMBT2907)

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Unit: mm

0.1+0.05

-0.01

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Thermal resistance from junction to ambient

Operating and Storage and Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

PD

RθJA

Tj, TSTG

Rating

60

30

5

600

250

500

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

Test conditions

V(BR)CBO IC = 10 μA, IE = 0

V(BR)CEO IC = 10 mA, IB = 0

V(BR)EBO IC = 10 μA, IC = 0

ICBO VCB=50V, IE=0

IEBO VEB= 3V, IC=0

VCE=10V, IC= 0.1mA

hFE VCE=10V, IC= 150mA

VCE=10V, IC= 500mA

collector-emitter saturation voltage *

base-emitter saturation voltage *

Transition frequency

Delay time

Rise time

Storage time

Fall time

IC = 150 mA; IB = 15 mA

VCE(sat)

IC = 500 mA; IB = 50 mA

VBE(sat)

fT

td

tr

ts

tf

IC = 150 mA; IB = 15 mA

IC = 500 mA; IB = 50 mA

IC = 20 mA; VCE = 20 V; f = 100 MHz

VCC=30V, VBE(off)=-0.5V,

IC=150mA , IB1= 15mA

VCC=30V, IC=150mA,IB1=-IB2=15mA

* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

■ Marking

Marking

M1B

1.Base

2.Emitter

3.collector

Unit

V

V

V

mA

mW

℃/W

℃

Min Typ Max Unit

75

V

40

V

6

V

10 nA

100 nA

35

100

300

30

0.4 V

1.6 V

1.3 V

2.6 V

250

MHz

10 ns

25 ns

225 ns

60 ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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