MMBT3904 데이터 시트보기 (PDF) - General Semiconductor
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MMBT3904 Datasheet PDF : 3 Pages
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MMBT3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at IC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Collector-Emitter Cutoff Current
VEB = 3 V, VCE = 30 V
Emitter-Base Cutoff Current
VEB = 3 V, VCE = 30 V
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Gain-Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at VCB = 5 V, f = 100 kHz
Emitter-Base Capacitance
at VEB = 0.5 V, f = 100 kHz
SYMBOL
V(BR)CBO
MIN.
60
V(BR)CEO
40
V(BR)EBO
6.0
VCEsat
Ð
VCEsat
Ð
VBEsat
Ð
VBEsat
Ð
ICEV
Ð
IEBV
Ð
hFE
40
hFE
70
hFE
100
hFE
60
hFE
30
hie
1
fT
300
CCBO
Ð
CEBO
Ð
MAX.
Ð
Ð
Ð
0.2
0.3
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
Ð
4
8
UNIT
V
V
V
V
V
V
V
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF
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