MMBT3904(2010) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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MMBT3904
(Rev.:2010)

Surface Mount Si-Epi-Planar Switching Transistors

Diotec Semiconductor Germany  

MMBT3904

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VCEsat

VCEsat

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VBEsat

VBEsat

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCE = 30 V, VEB = 3 V

ICBX

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 30 V, - VEB = 3 V

IEBV

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 20 V, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz

F

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

VCC = 3 V, VBE = 0.5 V

td

IC = 10 mA, IB1 = 1mA

tr

storage time

fall time

VCC = 3 V, IC = 10 mA,

ts

IB1 = IB2 = 1 mA

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

0.2 V

–

–

0.3 V

0.65 V

–

0.85 V

–

–

0.95 V

–

–

50 nA

–

–-

50 nA

300 MHz

–

–

–

–

4 pF

–

–

8 pf

–

–

5 dB

–

–

35 ns

–

–

35 ns

–

–

200 ns

–

–

50 ns

< 357 K/W 1)

MMBT3906

MMBT3904 = 1AM or 1E

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Valid, if leads are kept at ambient temperature

Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden

2

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