MMBT3904T 데이터 시트보기 (PDF) - TY Semiconductor

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MMBT3904T

NPN Small Signal Surface Mount Transistor

TY Semiconductor 

Product specification

MMBT3904T

■ Features

● Ultra-Small Surface Mount Package

● Complementary PNP Type Available(MMBT3906T)

SOT-523

1.6+0.1

-0.1

1.0+0.1

-0.1

0.2+0.05

-0.05

2

1

Unit: mm

0.1+0.01

-0.01

3

0.5+0.1

-0.1

0.3+0.25

-0.05

1. Base

2. Emitter

3. Collecter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient (Note 1)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PD

RθJA

TJ

Tstg

Rating

60

40

6

0.2

150

833

150

-55 to 150

Unit

V

V

V

A

mW

℃/W

℃

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collecto- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base - emitter saturation voltage

Delay time

Rise time

Storage time

Fall time

Transition frequency

■ Marking

Marking

1N

Symbol

Test conditons

VCBO Ic= 10 μA， IE=0

VCEO Ic= 1 mA， IB=0

VEBO IE= 10μA， IC=0

IcBO VCB= 60 V , IE=0

IcEO VCE= 30 V , VBE(off)=3V

IEBO VEB= 5V , IC=0

VCE= 1V, IC= 10mA

hFE

VCE= 1V, IC= 50mA

VCE(sat) IC=50 mA, IB= 5mA

VBE(sat) IC= 50 mA, IB= 5mA

td VCC=3.0V,VBE=-0.5V

tr IC=10mA,IB1=-IB2=1.0mA

ts VCC=3.0V,IC=10mA

tf IB1=-IB2=1.0mA

fT VCE= 20V, IC= 10mA,f=100MHz

Min Typ Max Unit

60

V

40

V

6

V

0.1 μA

50 nA

0.1 μA

100

300

60

0.4 V

0.95 V

35

ns

35

200

ns

50

300

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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