MMBT3904 데이터 시트보기 (PDF) - Unisonic Technologies
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MMBT3904 Datasheet PDF : 3 Pages
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MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
VCBO IC=10μA, IE=0
60
Collector-Emitter Breakdown Voltage
VCEO IC=1mA, IB=0 (Note)
40
Emitter-Base Breakdown Voltage
VEBO IE=10μA, IC=0
6
Collector-Emitter Saturation Voltage (Note) VCE(SAT)1 IC=10mA, IB=1mA
VCE(SAT)2 IC=50mA, IB=5mA
Base-Emitter Saturation Voltage (Note)
VBE(SAT)1 IC=10mA, IB=1mA
VBE(SAT)2 IC=50mA, IB=5mA
0.65
Collector Cut-Off Current
ICEX VCE=30V, VEB=3V
Base Cut-Off Current
IBL VCE=30V, VEB=3V
hFE1 VCE=1V, IC=0.1mA
40
hFE2 VCE=1V, IC=1mA
70
DC Current Gain (Note)
hFE3 VCE=1V, IC=10mA
100
hFE4 VCE=1V, IC=50mA
60
hFE5 VCE=1V, IC=100mA
30
Current Gain Bandwidth Product
fT VCE=20V, IC=10mA, f=100MHz
300
Output Capacitance
COB VCB=5V, IE=0, f=1MHz
Turn On Time
tON VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA
Turn Off Time
tOFF IB1=1B2=1mA
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
TYP
MAX UNIT
V
V
V
0.2 V
0.3 V
0.85 V
0.95 V
50 nA
50 nA
300
MHz
4 pF
70 ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-012.F
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