MMBT3904LT1 데이터 시트보기 (PDF) - Silicon Standard Corp.

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MMBT3904LT1

Transistors (NPN)

Silicon Standard Corp. 

FEATURES

„ Power dissipation, PCM:0.2W (Tamb=25℃)

„ Collector current, ICM: 0.2A

„ Collector-base voltage, V(BR)CBO: 60V

„ Operating and storage junction temperature range:

TJ, Tstg: -55℃ to +150℃

„ SOT-23 plastic-encapsulate package

Device Marking: AM1

MMBT3904LT1

Transistors (NPN)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0

Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0

Min

60

Max

40

Unit

V

V

Emitter-base breakdown voltage

V(BR)EBO IE= 100µA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 60V, IE=0

0.1 µA

Collector cut-off current

ICEO

VCE= 40V, IB=0

0.1 µA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1 µA

DC current gain

HFE(1)

VCE=10V, IC= 1mA

100

HFE(2)

VCE= 1V, IC= 50mA

60 300

Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA

0.3 V

Base-emitter saturation voltage

VBE(sat) IC= 50mA, IB= 5mA

0.95 V

Transition frequency

fT

VCE= 20V, IC= 10mA

250

f=100MHz

MHz

Delay Time

td

VCC=3.0Vdc,VBE=0.5Vdc

35 nS

Rise Time

tr

IC=10mAdc,IB1=1.0mAdc

35 nS

Storage Time

ts

VCC=3.0Vdc, IC=10mAdc

200 nS

Fall Time

tf

IB1=IB2=1.0mAdc

50 nS

Note: Unless otherwise specified, these specifications apply over the operating ambient

temperature of 25℃.

12/16/2006 Rev. 1.00

www.SiliconStandard.com

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