MMBT5401 데이터 시트보기 (PDF) - Weitron Technology

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MMBT5401

High Voltage PNP Transistors

Weitron Technology 

MMBT5401

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC=-1.0mAdc, VCE=-5.0Vdc)

(IC=-10mAdc, VCE=-5.0Vdc)

(IC=-50mAdc, VCE=-5.0Vdc)

Collector-Emitter Saturation Voltage

(IC=-10mAdc, IB=-1.0mAdc)

(IC=-50mAdc, IB=-5.0mAdc)

Base-Emitter Saturation Voltage

(IC=-10mAdc, IB=-1.0mAdc)

(IC=-50mAdc, IB=-5.0mAdc)

SMALL-SIGNAL CHARACTERISTICS

Collector-Gain-Bandwidth Product

( IC -10mVdc,VCE=-10Vdc, f=100MHz)

Output Capacitance

( VCB -10Vdc, IE=0, f=1.0MHz)

Small Signal Current Gain

( IC -1.0 mVdc,V CE=-10Vdc, f=1.0kHz)

Noise Figure

( IC -200 uA dc,V CE=-5.0Vdc, Rs=10 , f=1.0kHz)

hFE

50

60

50

VCE(sat)

-

VBE(sat)

-

-

240

-

-

-0.2

Vdc

-0.5

-1.0

Vdc

-1.0

fT

Cobo

h fe

NF

100

300

MHz

6.0

PF

40

200

8.0

dB

WEITRON

http://www.weitron.com.tw

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