MMBT5551(2005) 데이터 시트보기 (PDF) - Unisonic Technologies
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MMBT5551 Datasheet PDF : 4 Pages
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MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
Operating and Storage Junction Temperature
PD
350
mW
TJ, TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100µA, IE=0
Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO IE=10µA, IC=0
Collector Cut-off Current
ICBO VCB=120V, IE=0
Emitter Cut-off Current
IEBO VBE=4V, IC =0
VCE=5V, IC =1mA
DC Current Gain(note)
hFE VCE=5V, IC =10mA
VCE=5V, IC =50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT VCE=10V, IC =10mA, f=100MHz
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Noise Figure
NF
Note: Pulse test: PW<300µs, Duty Cycle<2%
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
MIN TYP MAX UNIT
180
V
160
V
6
V
50
nA
50
nA
80
80 160 400
80
0.15
0.2
V
1
1
V
100
300 MHz
6.0 pF
8
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,D
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