MMBTA06 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

부품명

상세내역

제조사

MMBTA06

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

MMBTA06

TRANSISTOR(NPN)

SOT–23

FEATURES

 For Switching and Amplifier Applications

 Complementary Type PNP Transistor MMBTA56

MARKING: 1GM

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

80

VCEO Collector-Emitter Voltage

80

VEBO Emitter-Base Voltage

4

IC

Collector Current

500

PC

Collector Power Dissipation

300

RΘJA Thermal Resistance From Junction To Ambient

416

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

V(BR)CBO IC=0.1mA, IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA, IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO IE=0.1mA, IC=0

4

V

Collector cut-off current

ICBO

VCB=80V, IE=0

0.1

µA

Collector cut-off current

ICES

VCE=60V, IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB=3V, IC=0

0.1

µA

DC current gain

hFE(1) VCE=1V, IC=10mA

100

400

hFE(2) VCE=1V, IC=100mA

100

Collector-emitter saturation voltage

VCE(sat) IC=100mA, IB=10mA

0.25

V

Base-emitter saturation voltage

VBE(sat) IC=100mA, IB=10mA

1.2

V

Transition frequency

fT

VCE=2V,IC=10mA, f=100MHz

100

MHz

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

Share Link: