MMDF3N02HDR2G(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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MMDF3N02HDR2G Datasheet PDF : 8 Pages
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MMDF3N02HD
Power MOSFET
3 Amps, 20 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 5.0 Vdc, Peak IL = 9.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance, Junction−to−Ambient
(Note 1)
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
RqJA
20
20
± 20
3.8
2.6
19
2.0
− 55 to 150
405
62.5
Vdc
Vdc
Vdc
Adc
Apk
W
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8″ from case for 10 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
3 AMPERES, 20 VOLTS
RDS(on) = 90 mW
N−Channel
D
G
S
8
1
SO−8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D3N02
AYWWG
G
1
D3N02
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
1 8 Drain−1
2 7 Drain−1
3 6 Drain−2
4 5 Drain−2
ORDERING INFORMATION
Device
Package Shipping†
MMDF3N02HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 8
Publication Order Number:
MMDF3N02HD/D
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