MMDF3N04HDR2 데이터 시트보기 (PDF) - ON Semiconductor

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MMDF3N04HDR2

Power MOSFET 3 Amps, 40 Volts

ON Semiconductor 

MMDF3N04HD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MW)

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ TA = 25°C (Note 1)

Drain Current− Continuous @ TA = 70°C (Note 1)

Drain Current− Pulsed Drain Current (Note 3)

Total Power Dissipation @ TA = 25°C (Note 1)

Linear Derating Factor (1)

Total Power Dissipation @ TA = 25°C (Note 2)

Linear Derating Factor (2)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)

Symbol

VDSS

VDGR

VGS

ID

ID

IDM

PD

PD

TJ, Tstg

EAS

Value

40

40

± 20

3.4

3.0

40

2.0

16

1.39

11.11

− 55 to 150

162

Unit

Vdc

Vdc

Vdc

Adc

Apk

Watts

mW/°C

Watts

mW/°C

°C

mJ

THERMAL RESISTANCE

Rating

Symbol

Thermal Resistance − Junction to Ambient, PCB Mount (Note 1)

− Junction to Ambient, PCB Mount (Note 2)

RqJA

RqJA

1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds)

2. When mounted on minimum recommended FR−4 or G−10 board (VGS = 10 V, @ Steady State)

3. Repetitive rating; pulse width limited by maximum junction temperature.

Typ.

−

−

Max.

62.5

90

Unit

°C/W

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