MMSD701T1 데이터 시트보기 (PDF) - Motorola => Freescale
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MMSD701T1 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSD301T1/D
SOD-123 Schottky Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular
MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
1
Cathode
2
Anode
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
MMSD301T1
VR
MMSD701T1
Forward Power Dissipation
PF
TA = 25°C
Junction Temperature
TJ
Storage Temperature Range
Tstg
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 µA)
MMSD301T1
MMSD701T1
V(BR)R
30
70
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MMSD301T1
MMSD701T1
CT
—
—
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MMSD301T1
MMSD701T1
MMSD301T1
MMSD701T1
MMSD301T1
MMSD701T1
CT
—
—
IR
—
—
VF
—
—
—
—
MMSD301T1
MMSD701T1
Motorola Preferred Devices
2
1
CASE 425–04, STYLE 1
SOD–123
Value
Unit
30
Vdc
70
225
mW
– 55 to +125
°C
– 55 to +150
°C
Typ
Max
Unit
Volts
—
—
—
—
pF
0.9
1.5
0.5
1.0
pF
0.9
1.5
0.5
1.0
13
200
nAdc
9.0
200
nAdc
Vdc
0.38
0.45
0.52
0.6
0.42
0.5
0.7
1.0
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
replaces MMSD101T1/D
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1
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