SSTA06(2007) 데이터 시트보기 (PDF) - ROHM Semiconductor

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SSTA06
(Rev.:2007)

NPN General Purpose Transistor

ROHM Semiconductor 

Transistors

SSTA06 / MMSTA06

NPN General Purpose Transistor

SSTA06 / MMSTA06

zFeatures

1) BVCEO < 80V ( IC=1mA)

2) Complements the SSTA56 / MMSTA56.

zPackage, marking and packaging specifications

Part No.

Packaging type

Mark

Code

Basic ordering unit (pieces)

SSTA06

SST3

R1G

T116

3000

MMSTA06

SMT3

R1G

T146

3000

zDimensions (Unit : mm)

SSTA06

ROHM : SST3

MMSTA06

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

80

80

4

0.5

0.2

0.35

150

−55 to +150

Unit

V

V

V

A

W

W∗

°C

°C

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency

Symbol

BVCBO

BVCEO

BVEBO

ICBO

ICEO

VCE(sat)

VBE(ON)

hFE

fT

Min. Typ. Max. Unit

Conditions

80

−

−

V IC=100µA

80

−

−

V IC=1mA

4

−

−

V IE=100µA

−

−

0.1

VCB=80V

µA

−

−

1

VCE=60V

−

−

0.25

V IC/IB=100mA/10mA

−

−

1.2

V VCE/IB=1V/100mA

100

−

−

VCE=1V, IC=10mA

−

100

−

−

VCE=1V, IC=100mA

100

−

−

MHz VCE=2V, IE= −10mA, f=100MHz

(1) Emitter

(2) Base

(3) Collector

Rev.B

1/3

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