MPSH10AL-C-T92-B(2014) 데이터 시트보기 (PDF) - Unisonic Technologies

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MPSH10AL-C-T92-B
(Rev.:2014)

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

MPSH10A

NPN EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3

V

Total Power Dissipation

PC

350

mW

Collector Current

IC

50

mA

Junction Temperature

TJ

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage BVCBO IC=100μA

Collector-Emitter Breakdown Voltage BVCEO IC=1mA

Emitter-Base Breakdown Voltage

BVEBO IE=10μA

Collector Cut-Off Current

ICBO VCB=25V

Emitter Cut-Off Current

IEBO VEB=2V

Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA

Base-Emitter On Voltage

VBE(ON) VCE=10V, IC=4mA

DC Current Gain

hFE VCE=10V, IC=4mA

Output Capacitace

COB VCB=10V, f=1MHZ

Current Gain Bandwidth Product

fT VCE=10V, IC=4mA, f=100MHZ

MIN TYP MAX UNIT

30

V

25

V

3

V

100 nA

100 nA

500 mV

950 mV

60

0.7 pF

650

MHZ

 CLASSIFICATION OF hFE

RANK

RANGE

A

60-100

B

90-130

C

120 -200

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-065.C

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