MTB2P50E 데이터 시트보기 (PDF) - ON Semiconductor
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MTB2P50E Datasheet PDF : 8 Pages
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MTB2P50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
−
−
564
−
Vdc
− mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
mAdc
−
−
10
−
−
100
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IGSS
VGS(th)
−
−
100 nAdc
2.0
3.0
4.0
Vdc
−
4.0
− mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
RDS(on)
VDS(on)
−
4.5
6.0
W
Vdc
−
9.5
14.4
−
−
12.6
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 250 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge (See Figure 8)
(VDS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
1.5
2.9
−
mhos
−
845
1183
pF
−
100
140
−
26
52
−
12
24
ns
−
14
28
−
21
42
−
19
38
−
19
27
nC
−
3.7
−
−
7.9
−
−
9.9
−
Vdc
−
2.3
3.5
−
1.85
−
Reverse Recovery Time
(See Figure 14)
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
−
223
−
ns
−
161
−
−
62
−
−
1.92
−
mC
nH
−
4.5
−
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
−
7.5
−
nH
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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