MTD6N20E(2013) 데이터 시트보기 (PDF) - ON Semiconductor
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MTD6N20E Datasheet PDF : 9 Pages
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MTD6N20E
Power MOSFET
6 A, 200 V, N−Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
200
200
± 20
± 40
6.0
3.8
18
50
0.4
1.75
−55 to
150
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
54
mJ
RqJC
RqJA
RqJA
2.50 °C/W
100
71.4
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 secs
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
6 AMPERES, 200 VOLTS
RDS(on) = 460 mW
N−Channel
D
G
S
12
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
4 Drain
12 3
Gate Drain Source
6N20E Device Code
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MTD6N20ET4G
DPAK
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
April, 2013 − Rev. 6
Publication Order Number:
MTD6N20E/D
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