MTP10N10EL 데이터 시트보기 (PDF) - ON Semiconductor
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MTP10N10EL Datasheet PDF : 8 Pages
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MTP10N10EL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)°
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)m
Static Drain−to−Source On−Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc)
Drain−to−Source On−Voltage
(VGS = 5.0 Vdc, ID = 10 Adc)°
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 50 Vdc, ID = 10 Adc,
VGS = 5.0 Vdc, Rg = 9.1 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 10 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 2)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
ta
tb
QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
Ld
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
Ls
(Measured from the source lead 0.25″ from package to source bond pad.)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
100
−
−
115
Vdc
−
−
mV/°C
mAdc
−
−
10
−
−
100
−
−
100
nAdc
Vdc
1.0
1.45
2.0
−
4.0
−
mV/°C
−
0.17
0.22
Ohm
Vdc
−
1.85
2.6
−
−
2.3
5.0
7.9
−
mhos
−
741
1040
pF
−
175
250
−
18.9
40
−
11
20
ns
−
74
150
−
17
30
−
38
80
−
9.3
15
nC
−
2.56
−
4.4
−
−
4.6
−
Vdc
−
0.98
1.6
−
0.898
−
−
124.7
−
ns
−
86
−
−
38.7
−
−
0.539
−
mC
nH
−
4.5
−
−
7.5
−
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