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MUR820 데이터 시트보기 (PDF) - Sirectifier Global Corp.

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MUR820
SIRECT
Sirectifier Global Corp. SIRECT
MUR820 Datasheet PDF : 3 Pages
1 2 3
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
IF=8A; TVJ=150oC
TVJ=25oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC
Characteristic Values
Unit
typ.
max.
20
uA
10
uA
1.5
mA
1.3
1.5
V
0.98
V
28.7
m
2.5
0.5
K/W
60
35
50
ns
2.5
2.8
A
FEATURES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling

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