NDF08N60Z 데이터 시트보기 (PDF) - ON Semiconductor
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NDF08N60Z Datasheet PDF : 6 Pages
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NDF08N60Z, NDP08N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 3)
3. Insertion mounted
Symbol
RqJC
RqJA
NDF08N60Z
3.6
50
NDP08N60Z
0.9
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
600
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
25°C
125°C
IDSS
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 4)
Static Drain−to−Source
On−Resistance
VGS = ±20 V
VGS = 10 V, ID = 3.5 A
IGSS
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 100 mA
VDS = 15 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 300 V, ID = 7.5 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 7.5 A,
VGS = 10 V, RG = 5 W
Fall Time
VGS(th)
3.0
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
td(on)
tr
td(off)
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 7.5 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 7.5 A, di/dt = 100 A/ms
Qrr
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
Typ
0.6
0.82
6.3
1140
129
30
39
7.5
21
6.2
1.6
14
22
36
15
320
2.2
Max
1
50
±10
0.95
4.5
1.6
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
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