NGTB15N60S1EG(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB15N60S1EG Datasheet PDF : 10 Pages
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NGTB15N60S1EG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
Symbol
RqJC
RqJC
RqJA
Value
1.06
3.76
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
Forward Transconductance
DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 V
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
Symbol Min Typ Max Unit
V(BR)CES 600
−
−
V
VCEsat 1.3
1.5
1.7
V
1.55 1.75 1.95
VGE(th) 4.5
5.5
6.5
V
ICES
−
10
−
mA
−
−
200
IGES
−
−
100
nA
gfs
− 10.1 −
S
Cies
− 1950 −
Coes
−
70
−
pF
Cres
−
42
−
Qg
−
88
−
Qge
−
16
−
nC
Qgc
−
42
−
td(on)
−
65
−
tr
−
28
−
ns
td(off)
−
170
−
tf
−
140
−
Eon
− 0.550 −
Eoff
− 0.350 −
mJ
Ets
− 0.900 −
td(on)
−
65
−
tr
−
28
−
ns
td(off)
−
180
−
tf
−
260
−
Eon
− 0.650 −
Eoff
− 0.600 −
mJ
Ets
− 1.250 −
VF
− 1.65 1.85
V
− 1.75 −
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