NGTB15N60S1EG(2012) 데이터 시트보기 (PDF) - ON Semiconductor

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NGTB15N60S1EG
(Rev.:2012)

IGBT - Short-Circuit Rated

ON Semiconductor 

NGTB15N60S1EG

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Test Conditions

DIODE CHARACTERISTIC

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TJ = 25°C

IF = 15 A, VR = 200 V

diF/dt = 200 A/µs

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TJ = 125°C

IF = 15 A, VR = 200 V

diF/dt = 200 A/µs

Symbol Min Typ Max Unit

trr

−

270

−

ns

Qrr

−

350

−

nc

Irrm

−

5

−

A

trr

−

350

−

ns

Qrr

− 1000 −

nc

Irrm

−

7.5

−

A

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