NGTB15N60S1EG(2012) 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

NGTB15N60S1EG
(Rev.:2012)

IGBT - Short-Circuit Rated

ON Semiconductor 

NGTB15N60S1EG

TYPICAL CHARACTERISTICS

35

30

TJ = 25°C

25

−40°C

20

150°C

15

10

5

0

0

0.5

1

1.5

2

2.5

VF, FORWARD VOLTAGE (V)

Figure 7. Diode Forward Characteristics

20

15

VCES = 480 V

10

5

0

0 10 20 30 40 50 60 70 80 90 100

QG, GATE CHARGE (nC)

Figure 8. Typical Gate Charge

0.7

0.6

Eon

0.5

Eoff

0.4

0.3

0.2

VCE = 400 V

VGE = 15 V

0.1

IC = 15 A

Rg = 22 W

0

0 20 40 60 80 100 120 140 160

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Switching Loss vs. Temperature

1000

tf

td(off)

100

td(on)

tr

10

VCE = 400 V

VGE = 15 V

IC = 15 A

Rg = 22 W

1

0 20 40 60 80 100 120 140 160

TJ, JUNCTION TEMPERATURE (°C)

Figure 10. Switching Time vs. Temperature

1.4

1.2

VCE = 400 V

VGE = 15 V

TJ = 150°C

1.0 Rg = 22 W

0.8

Eon

Eoff

1000

100

tf

td(off)

td(on)

0.6

0.4

0.2

0

8

12

16

20

24

28

32

IC, COLLECTOR CURRENT (A)

Figure 11. Switching Loss vs. IC

tr

10 VCE = 400 V

VGE = 15 V

TJ = 150°C

Rg = 22 W

1

8

12

16

20

24

28

32

IC, COLLECTOR CURRENT (A)

Figure 12. Switching Time vs. IC

http://onsemi.com

5

Share Link: