NIF9N05CLT1(2004) 데이터 시트보기 (PDF) - ON Semiconductor
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NIF9N05CLT1 Datasheet PDF : 6 Pages
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NIF9N05CL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
VGS = 4.5 V, VDD = 40 V,
ID = 2.6 A, RD = 15.4 W
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RD = 40 W
VGS = 10 V, VDD = 15 V,
ID = 2.6 A, RD = 5.8 W
VGS = 4.5 V, VDS = 40 V,
ID = 2.6 A (Note 3)
Gate Charge
VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
QT
Q1
Q2
Forward On−Voltage
IS = 2.6 A, VGS = 0 V (Note 3)
VSD
IS = 2.6 A, VGS = 0 V, TJ = 125°C
Reverse Recovery Time
trr
IS = 1.5 A, VGS = 0 V,
dIs/dt = 100 A/ms (Note 3)
ta
tb
Reverse Recovery Stored Charge
QRR
ESD CHARACTERISTICS
Electro−Static Discharge
Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
5000
500
Typ
275
1418
780
1120
242
1165
906
1273
107
290
1540
1000
4.5
0.9
2.6
3.9
1.0
1.7
0.81
0.66
730
200
530
6.3
Max
Unit
465
ns
2400
1320
1900
ns
ns
7.0
nC
nC
1.5
V
ns
mC
V
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