DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NJW3281G(2008) 데이터 시트보기 (PDF) - ON Semiconductor

부품명
상세내역
제조사
NJW3281G
(Rev.:2008)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NJW3281G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NJW3281G (NPN)
NJW1302G (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
ăExceptional Safe Operating Area
ăNPN/PNP Gain Matching within 10% from 50 mA to 5 A
ăExcellent Gain Linearity
ăHigh BVCEO
ăHigh Frequency
ăThese are Pb-Free Devices
Benefits
ăReliable Performance at Higher Powers
ăSymmetrical Characteristics in Complementary Configurations
ăAccurate Reproduction of Input Signal
ăGreater Dynamic Range
ăHigh Amplifier Bandwith
Applications
ăHigh-End Consumer Audio Products
ăHome Amplifiers
ăHome Receivers
ăProfessional Audio Amplifiers
ăTheater and Stadium Sound Systems
ăPublic Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current - Continuous
Collector Current - Peak (Note 1)
VCEO
VCBO
VEBO
VCEX
IC
250
Vdc
250
Vdc
5.0
Vdc
250
Vdc
15
Adc
30
Base Current - Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB
1.6
Adc
PD
200
W
1.43
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg -ā 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RqJC
0.625 °C/W
Thermal Resistance, Junction-to-Ambient RqJA
40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©Ă Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
http://onsemi.com
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
MARKING
DIAGRAM
NJWxxxG
AYWW
TO-3P
CASE 340AB
STYLES 1,2,3
xxxx
G
A
Y
WW
= 0281 or 0302
= Pb-Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW3281G
NJW1302G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NJW3281/D

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]