NJW3281G(2008) 데이터 시트보기 (PDF) - ON Semiconductor

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NJW3281G
(Rev.:2008)

Complementary NPN-PNP Silicon Power Bipolar Transistors

ON Semiconductor 

NJW3281G (NPN) NJW1302G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non-repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 8 Adc, VCE = 5 Vdc)

Collector-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

Base-Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Symbol

VCEO(sus)

ICBO

IEBO

IS/b

hFE

VCE(sat)

VBE(on)

fT

Cob

Min

Typ

Max

Unit

250

-

-

-

-

-

Vdc

-

mAdc

50

mAdc

5

Adc

4

-

-

-

75

-

150

75

-

150

75

-

150

60

-

-

45

-

-

Vdc

-

0.4

0.6

Vdc

-

-

1.5

MHz

-

30

-

pF

-

-

600

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