NJW3281G(2008) 데이터 시트보기 (PDF) - ON Semiconductor

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NJW3281G
(Rev.:2008)

Complementary NPN-PNP Silicon Power Bipolar Transistors

ON Semiconductor 

NJW3281G (NPN) NJW1302G (PNP)

PNP NJW1302G

100

NPN NJW3281G

100

10 mSec

10

10

10 mSec

1 Sec

100 mSec

1 Sec

100 mSec

1.0

1.0

0.1

1.0

10

100

1000

VCE, COLLECTOR EMITTER (VOLTS)

Figure 17. Active Region Safe Operating Area

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

0.1

1.0

10

100

1000

VCE, COLLECTOR EMITTER (VOLTS)

Figure 18. Active Region Safe Operating Area

The data of Figures 17 and 18 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

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