NTP125N02R(2003) 데이터 시트보기 (PDF) - ON Semiconductor
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NTP125N02R Datasheet PDF : 6 Pages
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NTB125N02R, NTP125N02R
200
4.0 V
4.5 V
160
5.0 V
6.0 V
120
8.0 V
10 V
80
40
3.5 V
3.0 V
VGS = 2.5 V
0
0
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
200
VDS ≥ 10 V
160
120
80
TJ = 125°C
40
TJ = 25°C
TJ = −55°C
0
0
0.8
1.6
2.4
3.2
4.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
VGS = 10 V
0.01
VGS = 4.5 V
0.008
0.008
TJ = 125°C
0.006
0.004
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.006
0.004
TJ = 25°C
TJ = −55°C
0.002
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.002
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.8
ID = 55 A
1.6
VGS = 4.5 V
1.4
1.2
100,000
VGS = 0 V
10,000
1000
TJ = 150°C
TJ = 125°C
1.0
0.8
0.6
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
TJ = 100°C
100
10
0
4.0
8.0
12
16
20
24
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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