NTP27N06 데이터 시트보기 (PDF) - ON Semiconductor

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NTP27N06

Power MOSFET 27 Amps, 60 Volts N–Channel TO–220 and D2PAK

ON Semiconductor 

NTP27N06, NTB27N06

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 1.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage (Note 1.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

–

–

IGSS

–

VGS(th)

2.0

–

Static Drain–to–Source On–Resistance (Note 1.)

(VGS = 10 Vdc, ID = 13.5 Adc)

RDS(on)

–

Static Drain–to–Source On–Resistance (Note 1.)

(VGS = 10 Vdc, ID = 27 Adc)

(VGS = 10 Vdc, ID = 13.5 Adc, TJ = 150°C)

VDS(on)

–

–

Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 6.0 Adc)

gFS

–

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 27 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω) (Note 1.)

td(on)

–

tr

–

td(off)

–

tf

–

Gate Charge

(VDS = 48 Vdc, ID = 27 Adc,

VGS = 10 Vdc) (Note 1.)

QT

–

Q1

–

Q2

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

VSD

(IS = 27 Adc, VGS = 0 Vdc) (Note 1.)

–

(IS = 27 Adc, VGS = 0 Vdc, TJ = 150°C)

–

Reverse Recovery Time

(IS = 27 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 1.)

trr

–

ta

–

tb

–

Reverse Recovery Stored Charge

QRR

–

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

70

–

79.4

–

mV/°C

µAdc

–

1.0

–

10

–

±100 nAdc

Vdc

2.8

4.0

6.9

–

mV/°C

mW

37.5

46

Vdc

1.05

1.5

2.12

–

13.2

–

mhos

725

1015

pF

213

300

58

120

13.6

30

ns

62.7

125

26.6

60

70.4

140

21.2

30

nC

5.6

–

7.3

–

Vdc

1.05

1.25

0.93

–

42

–

ns

26

–

16

–

0.07

–

µc

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