NTB4302(2003) 데이터 시트보기 (PDF) - ON Semiconductor
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NTB4302 Datasheet PDF : 8 Pages
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NTP4302, NTB4302
70 7 V
60 5 V
50
VGS = 10 V
4.6 V
TJ = 25_C
4.4 V
4V
40
3.8 V
30
3V
2.8 V
3.4 V
20
3.2 V
10
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS ≥ 10 V
50
40
30
TJ = 25°C
20
TJ = 100°C
10
TJ = −55°C
0
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.08
0.06
0.04
0.02
ID = 20 A
TJ = 25°C
0.015
TJ = 25°C
0.01
VGS = 4.5 V
0.005
VGS = 10 V
0
0
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0
0
10
20 30 40 50 60 70
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
ID = 20 A
VGS = 10 V
1.4
1.2
1
0.8
10000
VGS = 0 V
1000
100
10
TJ = 150°C
TJ = 100°C
0.6
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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