NTR4101P 데이터 시트보기 (PDF) - ON Semiconductor
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NTR4101P Datasheet PDF : 5 Pages
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NTR4101P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 mA)
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 mA)
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VGS = 0 V, f = 1 MHz, VDS = −10 V)
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Gate Resistance
(VGS = −4.5 V, VDS = −10 V, ID = −1.6 A)
(VDS = −10 V, ID = −1.6 A)
(VDS = −10 V, ID = −1.6 A)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = −4.5 V, VDS = −10 V,
ID = −1.6 A, RG = 6.0 W)
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = −2.4 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V,
dISD/dt = 100 A/ms, IS = −1.6 A)
Reverse Recovery Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
QG(tot)
QGS
QGD
RG
td(on)
tr
td(off)
tf
VSD
trr
ta
tb
Qrr
Min
−20
−0.4
Typ
−0.72
70
90
112
75
675
100
75
7.5
1.2
2.2
6.5
7.5
12.6
30.2
21.0
−0.82
12.8
9.9
3.0
1008
Max
−1.0
±100
−1.2
85
120
210
8.5
−1.2
15
Unit
V
mA
nA
V
mW
S
pF
nC
nC
nC
W
ns
V
ns
ns
ns
nC
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