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NVM3060 데이터 시트보기 (PDF) - Unspecified

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NVM3060
ETC
Unspecified ETC
NVM3060 Datasheet PDF : 13 Pages
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NVM 3060
2.5.3. Characteristics at VSUP = 5 V, TA= 25 _C
Symbol
ISUP
IIH
VIMOL
IIMOH
IIH
tP
Parameter
Pin No.
Supply Current
8
Input High Current
4 to 6
IM Bus Data Output Low Voltage 7
IM Bus Data Output High Current
Input Internal PUll-Down Current 2, 3
Erase or Write Time
Min.
17
35
8
Typ.
35
Max.
Unit
60
mA
10
µA
0.4
V
10
µA
260
µA
30
ms
Test Conditions
VIH = 5 V
IIMO = 3 mA
VIMO = 5 V
VIH = 5 V
H
Ident
L
ÉÉÉ H
Data
ÉÉÉÉÉÉ L
IM Bus Address
a) Entering memory address within a
Memory Address: 2 Bytes in
16 Bit transfer
ÉÉÉ H
Data
ÉÉÉÉÉÉ L
IM Bus Address
Memory Data: 1st Byte out
b1) Reading data as first Byte within a 16 Bit transfer
don’t care: 2nd Byte out
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
H
ÉÉÉ Data
ÉÉÉ L
IM Bus Address
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ Memory Data: single Byte out
b2) Alternative to b1: Reading Data as a single Byte in an 8 Bit transfer
H
ÉÉÉ Data
ÉÉÉ L
IM Bus Address
c) Entering Data as first Byte within a
Memory Data: 1st Byte in
16 Bit transfer
don’t care: 2nd Byte in
ÉÉÉÉÉÉÉÉÉÉ
a) enter memory address:
b) reading:
c) programming:
IM Bus Address
Pin 3 Low
Pin 3 High
128
132
129
133
131
135
Fig. 2–6: Signal diagram for the IM Bus
7

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