PBSS2515E,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBSS2515E,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 15 V; IE = 0 A
-
-
100 nA
current
VCB = 15 V; IE = 0 A;
-
-
50 µA
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
-
100 nA
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 2 V; IC = 10 mA
200 -
-
VCE = 2 V; IC = 100 mA [1] 150 -
-
VCE = 2 V; IC = 500 mA [1] 90 -
-
IC = 10 mA; IB = 0.5 mA
-
-
25 mV
IC = 200 mA; IB = 10 mA
-
-
150 mV
IC = 500 mA; IB = 50 mA [1] -
-
250 mV
IC = 500 mA; IB = 50 mA [1] -
300 500 mΩ
VBEsat
base-emitter saturation IC = 500 mA; IB = 50 mA [1] -
-
1.1 V
voltage
VBEon
base-emitter turn-on VCE = 2 V; IC = 100 mA [1] -
-
0.9 V
voltage
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
VCC = 11 V;
IC = 250 mA;
IBon = 12.5 mA;
IBoff = −12.5 mA
-
10 -
ns
-
15 -
ns
-
25 -
ns
-
215 -
ns
tf
fall time
-
34 -
ns
toff
turn-off time
-
249 -
ns
fT
transition frequency VCE = 5 V; IC = 100 mA;
250 420 -
MHz
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
4.4 6
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS2515E_2
Product data sheet
Rev. 02 — 21 April 2009
© NXP B.V. 2009. All rights reserved.
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