PBSS2515E,135 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBSS2515E,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
800
hFE
(1)
600
(2)
400
(3)
200
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1.2
IC
(A)
0.8
0.4
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IB = 5.0 mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10−1
1
10
102
103
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
1100
VBE
(mV)
900
(1)
700
(2)
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500
(3)
300
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
1.3
VBEsat
(V)
0.9
(1)
(2)
(3)
0.5
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100
10−1
1
10
102
103
IC (mA)
0.1
10−1
1
10
102
103
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS2515E_2
Product data sheet
Rev. 02 — 21 April 2009
© NXP B.V. 2009. All rights reserved.
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