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PEMB1 데이터 시트보기 (PDF) - Philips Electronics

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PEMB1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 22 k, R2 = 22 k
Preliminary specification
PEMB1
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor unless otherwise specified
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
Cc
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
CONDITIONS
VCB = 50 V; IC = 0
VCE = 50 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 10 mA
IE = Ie = 0; VCB = 10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
60
100 nA
1
µA
50 µA
180 µA
150 mV
1.1 0.8 V
2.5 1.7
V
15.4 22
28.6 k
0.8 1
1.2 k
3
pF
2001 Sep 13
4

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