PEMH10(2001) 데이터 시트보기 (PDF) - Philips Electronics
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PEMH10 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Preliminary specification
PEMH10
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped transistors in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMH10
MARKING CODE
10
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
ICM
TR1
collector-emitter voltage
peak collector current
NPN
TR2
NPN
R1
bias resistor
R2
bias resistor
MAX. UNIT
50
V
100 mA
−
−
−
−
2.2 kΩ
47
kΩ
PINNING
PIN
1, 4 emitter
2, 5 base
6, 3 collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
handbook, half6page 5
4
6
5
4
R1 R2
TR2
TR1
R2 R1
1
2
3
1
2
3
Top view
MHC049
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
6, 3
MBK120
1, 4
Fig.2 Equivalent inverter symbol.
2001 Oct 22
2
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