PHM25NQ10T 데이터 시트보기 (PDF) - Philips Electronics
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PHM25NQ10T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHM25NQ10T
TrenchMOS™ standard level FET
30
ID
Tj = 25 °C
(A)
20
03aj37
10 V 7 V 6 V
5.5 V
30
ID VDS > ID x RDSon
(A)
20
03aj39
5V
10
0
0
4.8 V
4.5 V
VGS = 4 V
0.2
0.4
0.6
0.8
1
VDS (V)
10
0
0
150 °C
Tj = 25 °C
2
4 VGS (V) 6
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aj38
60
3
Tj = 25 °C VGS = 5 V
a
RDSon
2.5
(mΩ)
5.5 V
40
2
6V
7V
1.5
10 V
20
1
03al21
0.5
0
0
10
20
ID (A) 30
0
-60
0
60
120
180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11843
Product data
Rev. 03 — 11 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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