PMD10K100 데이터 시트보기 (PDF) - Inchange Semiconductor

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PMD10K100

Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlingtion Power Transistor

isc Product Specification

PMD10K100

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 24mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 6A; IB=B 24mA

VBE(on) Base-Emitter On Voltage

ICER

Collector Cutoff current

IEBO

Emitter Cut-off current

IC= 6A; VCE= 3V

VCE= 100V; RBE= 1KΩ

VCE= 100V; RBE= 1KΩ, TC=150℃

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 6A; VCE= 3V

fT

Current-Gain—Bandwidth Product IC= 5A; VCE= 3V, f= 1kHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

MIN MAX UNIT

100

V

2.0

V

2.8

V

2.8

V

1.0

5.0

mA

2.0

mA

1000 20000

4

MHz

300

pF

isc Website：www.iscsemi.cn

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