PMD10K60 데이터 시트보기 (PDF) - Inchange Semiconductor
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PMD10K60 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD10K60
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Complement to type PMD11K60
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
12
A
ICP
Collector Current-Peak
20
A
IBB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃
150
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX UNIT
1.17 ℃/W
isc Website：www.iscsemi.cn
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