2N2222A 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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2N2222A

Si-Epi-Planar Switching Transistors

Diotec Semiconductor Germany  

PN2222 / PN2222A

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

PN2222

PN2222A

VCEsat

VCEsat

IC = 500 mA, IB = 50 mA

PN2222

PN2222A

VCEsat

VCEsat

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

PN2222

PN2222A

VBEsat

VBEsat

IC = 500 mA, IB = 50 mA

PN2222

PN2222A

VBEsat

VBEsat

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 50 V, (E open)

VCB = 60 V, (E open)

PN2222

ICBO

PN2222A

ICBO

VCB = 50 V, Tj = 125°C, (E open)

VCB = 60 V, Tj = 125°C, (E open)

PN2222

ICBO

PN2222A

ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 3 V, (C open)

PN2222A

IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 20 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz PN2222A

F

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

VCC = 3 V, VBE = 0.5 V

td

IC = 150 mA, IB1 = 15mA

tr

storage time

fall time

VCC = 3 V, IC = 150 mA,

ts

IB1 = IB2 = 15 mA

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

0.4 V

–

–

0.3 V

–

–

1.6 V

–

–

1.0 V

–

–

0.65 V

–

–

–

–

–

1.3 V

1.2 V

2.6 V

2.0 V

–

–

10 nA

–

–

10 nA

–

–

10 µA

–

–

10 µA

–

–-

100 nA

250 MHz

–

–

–

–

8 pF

–

–

30 pf

–

–

4 dB

–

–

10 ns

–

–

25 ns

–

–

225 ns

–

–

60 ns

< 200 K/W 1)

PN2709 / PN2709A

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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