PSMN030-60YS 데이터 시트보기 (PDF) - NXP Semiconductors.
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PSMN030-60YS Datasheet PDF : 13 Pages
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NXP Semiconductors
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
40
ID
(A)
30
003aae115
20
10
0
0
50
100
150
200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon= VDS/ ID
10
DC
1
10-1
1
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae116
t p =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
103
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN030-60YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 February 2010
© NXP B.V. 2010. All rights reserved.
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