PSMN030-60YS 데이터 시트보기 (PDF) - NXP Semiconductors.
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PSMN030-60YS Datasheet PDF : 13 Pages
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NXP Semiconductors
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
50
RDSon
(mΩ)
40
003aae124
30
20
10
4
8
12
16
20
VGS (V)
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
03aa35
min typ max
2
4
6
VGS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values.
gate-source voltage
5
VGS(th)
(V)
4
3
2
1
003aad280
2.4
a
2
max
1.6
typ
1.2
min
0.8
0.4
003aad696
0
−60
0
60
120
180
Tj (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature.
PSMN030-60YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 February 2010
© NXP B.V. 2010. All rights reserved.
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