RA20H8087M-E01 데이터 시트보기 (PDF) - Mitsumi

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RA20H8087M-E01

806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

Mitsumi 

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MODULE

RA20H8087M

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

VDD Drain Voltage

VGG<5V

VGG Gate Voltage

VDD<12.5V, Pin=0mW

Pin Input Power

Pout Output Power

f=806-825/ 851-870MHz,

ZG=ZL=50Ω

Tcase(OP) Operation Case Temperature Range

Tstg Storage Temperature Range

The above parameters are independently guaranteed.

RATING

17

6

100

40

-30 to +110

-40 to +110

UNIT

V

V

mW

W

°C

°C

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN TYP MAX

f

Frequency Range

806-825/ 851-870

Pout Output Power

VDD=12.5V, VGG=5V, Pin=50mW

ηT

Total Efficiency

2fo

2nd Harmonic

ρin

Input VSWR

Pout=20W(VGG control)

VDD=12.5 V

Pin=50mW

IGG Gate Current

— Stability

VDD=10.0-15.5V, Pin=25-70mW,

Pout=1 to 25W (VGG control), Load VSWR=3:1

—

Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=20W (VGG control),

Load VSWR=8:1

20

25

-30

3:1

1

No parasitic oscillation

No degradation or

destroy

UNIT

MHz

W

%

dBc

—

mA

—

—

All parameters, conditions, ratings, and limits are subject to change without notice.

RA 20H8087M

MITSUBISHI ELECTRIC

2/10

25 April 2003

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